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1N6073US thru 1N6081US VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
APPEARANCE Package "A" (or "D-5A") WWW .Microsemi .C OM
SCOTTSDALE DIVISION
DESCRIPTION
This "Ultrafast Recovery" rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated rectifiers (TEC =70C) in different package sizes with working peak reverse voltages from 50 to 150 volts are hermetically sealed using voidless-glass construction and an internal "Category I" metallurgical bond. These devices are also available in axial-lead package configurations for through-hole mounting by deleting the "US" suffix (see separate data sheet for 1N6073 thru 1N6081). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.
Package "E" (or "D-5B")
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
Package "G" (or "D-5C")
FEATURES
* * * * * * Popular 1N6073US to 1N6081US series Voidless hermetically-sealed glass package Extremely robust construction Triple-layer passivation Internal "Category I" Metallurgical bonds Options for screening in accordance with MIL-PRF19500/503 for JAN, JANTX, JANTXV, or JANS by using a MQ, MX, MV or MSP prefix respectively , e.g. MX6076, MV6079, MSP6081, etc. Axial-leaded equivalents also available (see separate data sheet for 1N6073 thru 1N6081) * * * * * * *
APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 50 to 150 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance for higher power Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi
MicroNote 050
*
MAXIMUM RATINGS
* Junction Temperature: -65 C to +155 C * Storage Temperature: -65oC to +155oC * Peak Forward Surge Current @ 25oC: 35 Amps for 1N6073US-6075US, 75 Amps for 1N6076US-6078US, and 175 Amps for 1N6079US-6081US at 8.3 ms halfsine wave * Average Rectified Forward Current (IO) at TEC= +70oC: 1N6073US thru 1N6075US: 3.0 Amps 1N6076US thru 1N6078US: 6.0 Amps 1N6079US thru 1N6081US: 12.0 Amps Average Rectified Forward Current (IO) at TA=55oC: 1N6073US thru 1N6075US: 0.85 Amps 1N6076US thru 1N6078US: 1.3 Amps 1N6079US thru 1N6081US: 2.0 Amps * Thermal Resistance (RJEC): 13oC/W for 1N6073USo 6075US, 8.5 C/W for 1N6076US-6078US, and o 5.0 C/W for 1N6079US-6081US o * Solder temperature: 260 C for 10 s (maximum)
o o
MECHANICAL AND PACKAGING
* * CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead finish. MARKING: None POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-481-B Weight: 1N6073 thru 1N6075: 193 mg 1N6076 thru 1N6078: 539 mg 1N6079 thru 1N6081: 1100 mg See package dimensions and recommended pad layouts on last page for all three package sizes
* * * *
1N6073US1N6081US
*
Copyright (c) 2007 1-17-2007 REV C
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6073US thru 1N6081US VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
WWW .Microsemi .C OM
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise specified
WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 50 100 150 50 100 150 50 100 150 MAXIMUM FORWARD VOLTAGE (PULSED) VF VOLTS 2.04 2.04 2.04 1.76 1.76 1.76 1.50 1.50 1.50
@
TYPE
PULSED TEST CURRENT
AVERAGE RECTIFIED CURRENT IO @ TEC = 70C AMPS 3.0 3.0 3.0 6.0 6.0 6.0 12.0 12.0 12.0
AVERAGE RECTIFIED CURRENT IO @ TA = 55C AMPS 0.85 0.85 0.85 1.3 1.3 1.3 2.0 2.0 2.0
MAXIMUM REVERSE CURRENT IR @ VRWM A 1.0 1.0 1.0 5.0 5.0 5.0 10.0 10.0 10.0
MAXIMUM REVERSE RECOVERY TIME* trr ns 30 30 30 30 30 30 30 30 30
MAXIMUM SURGE CURRENT IFSM AMPS 35 35 35 75 75 75 175 175 175
1N6073US 1N6074US 1N6075US 1N6076US 1N6077US 1N6078US 1N6079US 1N6080US 1N6081US
IF AMPS 9.4 9.4 9.4 18.8 18.8 18.8 37.7 37.7 37.7
*NOTE: IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A Symbol
VBR VRWM VF IR trr
SYMBOLS & DEFINITIONS Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached.
PACKAGE DIMENSIONS
PACKAGE A (1N6073US thru 1N6075US)
1N6073US1N6081US
NOTE: This Package Outline has also previously been identified as "D-5A"
INCHES MIN BD BL ECT S .097 .185 .019 .003 MAX .103 .200 .028 --MIN 2.46 4.70 0.48 0.08 mm MAX 2.62 5.08 0.71 --A B C
PAD LAYOUT
INCHES 0.246 0.067 0.105 mm 6.25 1.70 2.67
Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement.
Copyright (c) 2007 1-17-2007 REV C
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N6073US thru 1N6081US VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
WWW .Microsemi .C OM
SCOTTSDALE DIVISION
PACKAGE E (1N6076US thru 1N6078US)
E-MELF-PKG (D-5B)
Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement as shown in the pad layout.
PACKAGE G (1N6079US thru 1N6081US)
1N6073US1N6081US
G-MELF-PKG (D-5C)
Note: If mounting requires adhesive separate from the solder, an additional 0.090 inch diameter contact may be placed in the center between the pads as an optional spot for cement as shown in the pad layout.
Copyright (c) 2007 1-17-2007 REV C
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3

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